是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | TO-220, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 1.09 |
Is Samacsys: | N | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 800 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 3 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 11 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC5603DTU_NL | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC5603DWTM | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plast | |
KSC5801 | FAIRCHILD |
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High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) | |
KSC5801TBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5801YDTBTU | FAIRCHILD |
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Power Bipolar Transistor, 8A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5802 | FAIRCHILD |
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High Voltage Color Display Horizontal Deflection Output (No Damper Diode) | |
KSC5802ASDTBTU | FAIRCHILD |
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Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5802ATBTU | FAIRCHILD |
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Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5802AYDTBTU | FAIRCHILD |
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Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5802D | FAIRCHILD |
获取价格 |
High Voltage Color Display Horizontal Deflection Output (Built In Damper Diode) |