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KSC5502DT PDF预览

KSC5502DT

更新时间: 2024-11-13 23:16:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关电源开关高压
页数 文件大小 规格书
11页 139K
描述
High Voltage Power Switch Switching Application

KSC5502DT 数据手册

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KSC5502D/KSC5502DT  
D-PAK  
Equivalent Circuit  
C
High Voltage Power Switch Switching  
Application  
1
Wide Safe Operating Area  
TO-220  
Built-in Free-Wheeling Diode  
B
Suitable for Electronic Ballast Application  
Small Variance in Storage Time  
Two Package Choices : D-PAK or TO-220  
E
1
1.Base 2.Collector 3.Emitter  
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
1200  
CBO  
CEO  
EBO  
600  
V
12  
V
I
I
I
I
2
A
C
4
A
CP  
B
1
A
*Base Current (Pulse)  
2
50  
A
BP  
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
mJ  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
2.5  
STG  
EAS  
Avalanche Energy(T =25°C)  
j
* Pulse Test : Pulse Width = 5ms, Duty Cycle 10%  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Characteristics  
Junction to Case  
Junction to Ambient  
Rating  
2.5  
Unit  
R
R
Thermal Resistance  
°C/W  
θjc  
62.5  
270  
θja  
T
Maximun Lead Temperature for Soldering Purpose  
: 1/8” from Case for 5 seconds  
°C  
L
©2001 Fairchild Semiconductor Corporation  
Rev. A2, August 2001  

KSC5502DT 替代型号

型号 品牌 替代类型 描述 数据表
KSC5502DTM FAIRCHILD

类似代替

Power Bipolar Transistor, 2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
KSC5502D FAIRCHILD

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High Voltage Power Switch Switching Application
KSC5502DTM ONSEMI

功能相似

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KSC5504DT FAIRCHILD

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KSC5504DTTU ROCHESTER

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4A, 600V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN