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JANSG2N7269U

更新时间： 2024-11-18 20:17:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 275K
描述
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

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中文翻译

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JANSG2N7269U 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-CBCC-N3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.27
其他特性：RADIATION HARDENED雪崩能效等级（Eas）：500 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (ID)：26 A
最大漏源导通电阻：0.11 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：104 A认证状态：Qualified
参考标准：MIL-19500/603表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

JANSG2N7269U 数据手册

 浏览型号JANSG2N7269U的Datasheet PDF文件第2页浏览型号JANSG2N7269U的Datasheet PDF文件第3页浏览型号JANSG2N7269U的Datasheet PDF文件第4页浏览型号JANSG2N7269U的Datasheet PDF文件第5页浏览型号JANSG2N7269U的Datasheet PDF文件第6页浏览型号JANSG2N7269U的Datasheet PDF文件第7页 
PD - 90679F  
IRHN7250  
JANSR2N7269U  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT(SMD-1)  
200V, N-CHANNEL  
REF:MIL-PRF-19500/603  
RAD-Hard™HEXFET® TECHNOLOGY  
Product Summary  
Part Number  
IRHN7250  
IRHN3250  
IRHN4250  
IRHN8250  
Radiation Level  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
1000K Rads (Si)  
RDS(on)  
0.1Ω  
0.1Ω  
0.1Ω  
0.1Ω  
ID  
QPL Part Number  
26A JANSR2N7269U  
26A JANSF2N7269U  
26A JANSG2N7269U  
26A JANSH2N7269U  
SMD-1  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rds(on) and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
26  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
16  
104  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
26  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 for 5 sec)  
2.6 (Typical )  
Package Mounting Surface Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
12/17/01  
1234567...12

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JANSG2N7431U INFINEON

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