R
A
D
H
a
r
d
H
E
X
F
E
T®
T
E
C
H
N
O
L
O
G
Y
Absolute Maximum Ratings
Parameter
PD - 91564D
IRHM7064
JANSR2N7431
60V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
REF:MIL-PRF-19500/663
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHM7064
IRHM3064
IRHM4064
IRHM8064
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
0.021Ω 35*A JANSR2N7431
0.021Ω 35*A JANSF2N7431
0.021Ω 35*A JANSG2N7431
0.021Ω 35*A JANSH2N7431
TO-254AA
International Rectifiers RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Pre-Irradiation
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
C
35*
35
D
GS
A
I
= 12V, T = 100°C Continuous Drain Current
C
D
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
284
DM
P
D
@ T = 25°C
C
250
W
W/°C
V
Linear Derating Factor
2.0
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
35
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
25
mJ
V/ns
AR
dv/dt
2.5
T
-55 to 150
J
T
Storage Temperature Range
oC
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
Lead Temperature
Weight
g
For footnotes refer to the last page
*Current is limited by pin diameter
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