是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.47 | 其他特性: | RADIATION HARDENED |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 150 W | 最大脉冲漏极电流 (IDM): | 44 A |
认证状态: | Not Qualified | 参考标准: | MIL-19500/603 |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
JANSG2N7270U | INFINEON | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta |
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JANSG2N7281 | INFINEON | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met |
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JANSG2N7380 | INFINEON | Rad hard, 100V, 14.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 500 |
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JANSG2N7381 | ETC | 200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
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JANSG2N7394 | INFINEON | Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 500 kra |
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JANSG2N7394U | INFINEON | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) |
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