Datasheet > JANSG2N7381

JANSG2N7381

更新时间： 2024-11-04 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	106K
描述
200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package

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JANSG2N7381 数据手册

PD - 91273C

IRHY7230CM

JANSR2N7381

200V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-257AA)

REF:MIL-PRF-19500/614

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number

Radiation Level

RDS(on)

0.40Ω

QPL Part Number

IRHY7230CM 100K Rads (Si)

IRHY3230CM 300K Rads (Si)

IRHY4230CM 600K Rads (Si)

9.4A JANSR2N7381

9.4A JANSF227381

9.4A JANSG2N7381

9.4A JANSH2N7381

IRHY8230CM 1000K Rads (Si) 0.40Ω

TO-257AA

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rds(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

9.4

= 12V, T = 100°C Continuous Drain Current

6.0

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

150

5.5

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

7.0 (Typical )

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

12/17/01

12 3 4 5 6 7 8

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与JANSG2N7381相关器件

型号	品牌	获取价格	描述	数据表
JANSG2N7394	INFINEON	获取价格	Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 500 kra
JANSG2N7394U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
JANSG2N7431	INFINEON	获取价格	Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 500 kra
JANSG2N7431D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
JANSG2N7431U	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 500 krad(Si)
JANSG2N7432	ETC	获取价格	100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
JANSG2N7432U	ETC	获取价格	100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package
JANSG2N7433	INFINEON	获取价格	Rad hard, 200V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 500 kr
JANSG2N7433U	INFINEON	获取价格	Rad hard, 200V, 27A, single, N-channel MOSFET, R4 in a SMD-2 package - JANS Certified vers
JANSG2N7467U2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET

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