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JANSG2N7381 PDF预览

JANSG2N7381

更新时间： 2024-02-25 02:39:11
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 106K
描述
200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package

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中文翻译

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JANSG2N7381 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.74雪崩能效等级（Eas）：150 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (ID)：9.4 A最大漏源导通电阻：0.49 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-257AA
JESD-30 代码：R-MSFM-P3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：METAL封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：37 A
认证状态：Not Qualified参考标准：MIL-19500/614
表面贴装：NO端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANSG2N7381 数据手册

 浏览型号JANSG2N7381的Datasheet PDF文件第2页浏览型号JANSG2N7381的Datasheet PDF文件第3页浏览型号JANSG2N7381的Datasheet PDF文件第4页浏览型号JANSG2N7381的Datasheet PDF文件第5页浏览型号JANSG2N7381的Datasheet PDF文件第6页浏览型号JANSG2N7381的Datasheet PDF文件第7页 
PD - 91273C  
IRHY7230CM  
JANSR2N7381  
200V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
REF:MIL-PRF-19500/614  
RAD-Hard™HEXFET® TECHNOLOGY  
Product Summary  
Part Number  
Radiation Level  
RDS(on)  
0.40Ω  
0.40Ω  
0.40Ω  
ID  
QPL Part Number  
IRHY7230CM 100K Rads (Si)  
IRHY3230CM 300K Rads (Si)  
IRHY4230CM 600K Rads (Si)  
9.4A JANSR2N7381  
9.4A JANSF227381  
9.4A JANSG2N7381  
9.4A JANSH2N7381  
IRHY8230CM 1000K Rads (Si) 0.40Ω  
TO-257AA  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rds(on) and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
9.4  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
6.0  
37  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
0.6  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
150  
mJ  
A
AS  
I
5.5  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
16  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
7.0 (Typical )  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
12/17/01  
12345678

中文翻译

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