Datasheet > JANSG2N7431

JANSG2N7431

更新时间： 2023-12-06 20:12:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1335K
描述
Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 500 krad(Si) TID, QPL

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JANSG2N7431 数据手册

IRHM7064 (JANSR2N7431)

PD-91564J

Radiation Hardened Power MOSFET

Thru-Hole (TO-254AA)

60V, N-channel, Rad Hard HEXFET™ Technology

Product Summary

Features



Single event effect (SEE) hardened



Part number: IRHM7064 (JANSR2N7431),

IRHM3064 (JANSF2N7431),

IRHM5064 (JANSG2N7431)

REF: MIL-PRF-19500/663

Radiation level: 100 krad (Si),

300 krad (Si), 500 krad (Si)

R_DS(on),max: 21 m

Low R_DS(on)

Low total gate charge

Simple drive requirements

Hermetically sealed



Electrically isolated



I_D: 35A*

Ceramic package

ESD rating: Class 3B per MIL-STD-750, Method 1020

Potential Applications



DC-DC converter

Motor drives



TO254AA

Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This

technology has over a decade of proven performance and reliability in satellite applications. These devices have

been characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low gate

charge reduces the power losses in switching applications such as DC to DC converters and motor control. These

devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHM7064

Ordering options

Package

Screening Level

COTS

TID Level

TO-254AA

100krad(Si)

300krad(Si)

500krad(Si)

IRHM7064SCS

JANSR2N7431

IRHM3064

S-Level

JANS

COTS

JANSF2N7431

IRHM5064

JANS

COTS

JANSG2N7431

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 13

www.infineon.com/irhirel

2021-06-24

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