Datasheet > IXYH40N65C3D1

IXYH40N65C3D1

更新时间： 2024-09-18 01:19:51

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
7页	196K
描述
Advance Technical Information

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXYH40N65C3D1 数据手册

Advance Technical Information

XPT^TM650V IGBT

GenX3^TMw/ Diode

V_CES= 650V

I_C110= 40A

V_CE(sat) 2.35V

t_fi(typ)= 20ns

IXYH40N65C3D1

IXYQ40N65C3D1

Extreme Light Punch Through

IGBT for 20-60 kHz Switching

TO-247 (IXYH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 175°C

650

T_J= 25°C to 175°C, R_GE= 1M

Tab

V_GES

V_GEM

Continuous

Transient

±20

±30

TO-3P (IXYQ)

I_C25

I_C110

I_F110

T_C= 25°C

T_C= 110°C

I_CM

T_C= 25°C, 1ms

180

I_A

E_AS

T_C= 25°C

Tab

300

SSOA

_GE= 15V, T_VJ= 150°C, R_G= 10

I_CM= 80

μs

G = Gate

E = Emitter

Collector

(RBSOA)

Clamped Inductive Load

@V_CE V_CES

Tab = Collector

t_sc

V_GE= 15V, V_CE= 360V, T_J= 150°C

(SCSOA)

R_G= 82, Non Repetitive

Features

P_C

T_C= 25°C

300



Optimized for 20-60kHz Switching

Square RBSOA

Anti-Parallel Fast Diode

Avalanche Rated

T_J

T_JM

T_stg

-55 ... +175

175

°C



-55 ... +175

Short Circuit Capability

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Advantages

M_d

Mounting Torque

1.13/10

Nm/lb.in



Weight

TO-247

TO-3P

6.0

5.5

High Power Density

Extremely Rugged

Low Gate Drive Requirement



Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25C, Unless Otherwise Specified)

Min.

650

3.5

Typ.

Max.



Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V



6.0



10 A

1.5 mA



T_J= 150C



I_GES

V_CE= 0V, V_GE= 20V

100 nA



V_CE(sat)

I_C= 40A, V_GE= 15V, Note 1

2.0

2.4

2.35



High Frequency Power Inverters

DS100625(8/14)

12 3 4 5 6 7

中文翻译

下载PDF

与IXYH40N65C3D1相关器件

型号	品牌	获取价格	描述	数据表
IXYH40N65C3H1	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYH40N90C3	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYH40N90C3D1	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYH50N120C3	IXYS	获取价格	1200V XPT IGBT GenX3
IXYH50N120C3	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYH50N120C3D1	IXYS	获取价格	High-Speed IGBT for 20-50 kHz Switching
IXYH50N120C3D1	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYH50N65C3	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXYH50N65C3D1	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXYH50N65C3H1	IXYS	获取价格	Insulated Gate Bipolar Transistor,