Datasheet > IXYH40N90C3D1

IXYH40N90C3D1

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	248K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产，具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。它们具有正集电

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中文翻译

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数据手册

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IXYH40N90C3D1 数据手册

Preliminary Technical Information

900V XPT^TMIGBT

GenX3^TMw/ Diode

V_CES= 900V

I_C110= 40A

V_CE(sat)≤ 2.5V

t_fi(typ)= 110ns

IXYH40N90C3D1

High-Speed IGBT

for 20-50 kHz Switching

TO-247 AD

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

900

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

Tab

I_C25

I_C110

I_F110

T_C= 25°C

T_C= 110°C

G = Gate

E = Emitter

Collector

Tab = Collector

I_CM

T_C= 25°C, 1ms

180

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 80

(RBSOA)

Clamped Inductive Load

@V_CE≤ V_CES

P_C

T_C= 25°C

500

Features

T_J

T_JM

T_stg

-55 ... +150

150

°C

Optimized for Low Switching Losses

Square RBSOA

Positive Thermal Coefficient of

Vce(sat)

Anti-Parallel Ultra Fast Diode

High Current Handling Capability

International Standard Package

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

M_d

Mounting Torque

1.13/10

Nm/lb.in.

Weight

Advantages

High Power Density

Low Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25°C, Unless Otherwise Specified)

Min.

950

3.5

Typ.

Max.

High Frequency Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

5.5

25 μA

750 μA

T_J= 125°C

T_J= 150°C

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

Lamp Ballasts

V_CE(sat)

I_C= 40A, V_GE= 15V, Note 1

2.2

2.9

2.5

DS100441A(02/13)

12 3 4 5 6 7 8

中文翻译

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