Datasheet > IXYH50N120C3D1

IXYH50N120C3D1

更新时间： 2024-11-20 12:26:43

品牌	Logo	应用领域
IXYS		开关双极性晶体管
页数	文件大小	规格书
7页	186K
描述
High-Speed IGBT for 20-50 kHz Switching

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中文翻译

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数据手册

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IXYH50N120C3D1 数据手册

1200V XPT^TMIGBT

GenX3^TMw/ Diode

V_CES= 1200V

I_C100= 50A

V_CE(sat)≤ 4.0V

t_fi(typ)= 43ns

IXYH50N120C3D1

High-Speed IGBT

for 20-50 kHz Switching

TO-247 AD

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

Tab

I_C25

I_C100

I_F110

I_CM

T_C= 25°C (Chip Capability)

T_C= 100°C

T_C= 110°C

G = Gate

E = Emitter

Collector

Tab = Collector

T_C= 25°C, 1ms

210

SSOA

V_GE= 15V, T_VJ= 150°C, R_G= 5Ω

I_CM= 100

(RBSOA)

Clamped Inductive Load

@V_CE≤ V_CES

P_C

T_C= 25°C

625

Features

T_J

T_JM

T_stg

-55 ... +150

150

°C

Optimized for Low Switching Losses

Square RBSOA

Positive Thermal Coefficient of

Vce(sat)

Anti-Parallel Ultra Fast Diode

High Current Handling Capability

International Standard Package

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

M_d

Mounting Torque

1.13/10

Nm/lb.in.

Weight

Advantages

High Power Density

Low Gate Drive Requirement

Applications

High Frequency Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1200

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

5.0

50 μA

T_J= 125°C

T_J= 150°C

500 μA

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 50A, V_GE= 15V, Note 1

4.0

4.2

DS100388C(02/13)

12 3 4 5 6 7

中文翻译

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