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IXYK100N65C3D1 PDF预览

IXYK100N65C3D1

更新时间: 2024-11-19 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 252K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXYK100N65C3D1 数据手册

 浏览型号IXYK100N65C3D1的Datasheet PDF文件第2页浏览型号IXYK100N65C3D1的Datasheet PDF文件第3页浏览型号IXYK100N65C3D1的Datasheet PDF文件第4页浏览型号IXYK100N65C3D1的Datasheet PDF文件第5页浏览型号IXYK100N65C3D1的Datasheet PDF文件第6页浏览型号IXYK100N65C3D1的Datasheet PDF文件第7页 
Advance Technical Information  
XPTTM 650V IGBT  
GenX3TM w/ Diode  
IXYK100N65C3D1  
IXYX100N65C3D1  
VCES = 650V  
IC110 = 100A  
VCE(sat)  2.3V  
tfi(typ) = 60ns  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
TO-264 (IXYK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
E
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
Tab  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXYX)  
IC25  
TC = 25°C (Chip Capability)  
Terminal Current Limit  
TC = 110°C  
200  
160  
100  
67  
A
A
A
A
ILRMS  
IC110  
IF110  
TC = 110°C  
ICM  
TC = 25°C, 1ms  
420  
A
G
C
Tab  
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
E
600  
mJ  
G = Gate  
C = Collector  
E
= Emitter  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 3  
Clamped Inductive Load  
ICM = 200  
A
μs  
W
Tab = Collector  
(RBSOA)  
@VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
7
Features  
(SCSOA)  
RG = 10, Non Repetitive  
PC  
TC = 25°C  
830  
International Standard Packages  
Optimized for 20-60kHz Switching  
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
Anti-Parallel Ultra Fast Diode  
High Current Handling Capability  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Advantages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
6.0  
50 μA  
mA  
±100 nA  
TJ = 150°C  
TJ = 150°C  
3
IGES  
VCE = 0V, VGE = ±20V  
Lamp Ballasts  
VCE(sat)  
IC = 70A, VGE = 15V, Note 1  
1.8  
2.2  
2.3  
V
V
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100631(10/14)  

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