Datasheet > IXYH75N65C3D1

IXYH75N65C3D1

更新时间： 2023-12-06 20:13:14

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	270K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产，具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。它们具有正集电

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXYH75N65C3D1 数据手册

Preliminary Technical Information

XPT^TM650V IGBT

GenX3^TMw/ Diode

IXYH75N65C3D1

V_CES= 650V

I_C110= 75A

V_CE(sat) 2.3V

t_fi(typ)= 60ns

Extreme Light Punch through

IGBT for 20-60kHz Switching

TO-247 AD

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 175°C

650

T_J= 25°C to 175°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

±20

±30

Tab

I_C25

I_LRMS

T_C= 25°C (Chip Capability)

Terminal Current Limit

175

160

G = Gate

Collector

E = Emitter

Tab = Collector

I_C110

I_F110

T_C= 110°C

I_CM

T_C= 25°C, 1ms

360

I_A

E_AS

T_C= 25°C

300

SSOA

V_GE= 15V, T_VJ= 150°C, R_G= 3

Clamped Inductive Load

I_CM= 150

μs

Features

(RBSOA)

V_CE V_CES



International Standard Package

Optimized for 20-60kHz Switching

Square RBSOA

t_sc

V_GE= 15V, V_CE= 360V, T_J= 150°C



(SCSOA)

R_G= 82, Non Repetitive

Avalanche Rated

P_C

T_C= 25°C

750

Short Circuit Capability

T_J

T_JM

T_stg

-55 ... +175

175

°C

High Current Handling Capability

Anti-Parallel Fast Diode

-55 ... +175

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Advantages



High Power Density

Low Gate Drive Requirement

M_d

Mounting Torque

1.13/10

Nm/lb.in



Weight

Applications



Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

650

3.5

Typ.

Max.



BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V



6.0

25 A

100 nA

T_J= 150C

I_GES

V_CE= 0V, V_GE= 20V

V_CE(sat)

I_C= 60A, V_GE= 15V, Note 1

1.8

2.2

2.3

DS100626A(4/15)

12 3 4 5 6 7 8

下载PDF

与IXYH75N65C3D1相关器件

型号	品牌	描述	获取价格	数据表
IXYH75N65C3H1	IXYS	Insulated Gate Bipolar Transistor,	获取价格
IXYH75N65C3H1	LITTELFUSE	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT	获取价格
IXYH80N90C3	IXYS	XPTTM 900V IGBT	获取价格
IXYH80N90C3	LITTELFUSE	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT	获取价格
IXYH82N120C3	IXYS	1200V XPT IGBT GenX3	获取价格
IXYH82N120C3	LITTELFUSE	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT	获取价格