Datasheet > IXYH50N65C3

IXYH50N65C3

更新时间： 2024-01-02 07:57:38

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
7页	270K
描述
Insulated Gate Bipolar Transistor,

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXYH50N65C3 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	7.43	Base Number Matches：	1

IXYH50N65C3 数据手册

Preliminary Technical Information

XPT^TM650V IGBT

GenX3^TM

V_CES= 650V

I_C110= 50A

V_CE(sat) 2.10V

t_fi(typ)= 26ns

IXYA50N65C3

IXYP50N65C3

IXYH50N65C3

Extreme Light Punch Through

IGBT for 20-60kHz Switching

TO-263 (IXYA)

C (Tab)

Symbol

Test Conditions

Maximum Ratings

TO-220 (IXYP)

V_CES

V_CGR

T_J= 25°C to 175°C

650

T_J= 25°C to 175°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

±20

±30

C (Tab)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

132

250

TO-247 AD (IXYH)

I_A

E_AS

T_C= 25°C

400

SSOA

V_GE= 15V, T_VJ= 150°C, R_G= 5

Clamped Inductive Load

I_CM= 100

μs

C (Tab)

(RBSOA)

V_CE V_CES

t_sc

V_GE= 15V, V_CE= 360V, T_J= 150°C

G = Gate

E = Emitter

= Collector

Tab = Collector

(SCSOA)

R_G= 82, Non Repetitive

P_C

T_C= 25°C

600

Features

T_J

T_JM

T_stg

-55 ... +175

175

°C



Optimized for 20-60kHz Switching

Square RBSOA

Avalanche Rated

Short Circuit Capability

International Standard Packages



-55 ... +175

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-247 & TO-220)

10..65 / 2.2..14.6

1.13 / 10

N/lb

Nm/lb.in

Advantages



Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

High Power Density

Extremely Rugged

Low Gate Drive Requirement



Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

650

3.5

Typ.

Max.



Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts



BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V



6.0



15 A

250 A



T_J= 150C



I_GES

V_CE= 0V, V_GE= 20V

100 nA



V_CE(sat)

I_C= 36A, V_GE= 15V, Note 1

1.73

2.10

High Frequency Power Inverters

DS100552C(9/14)

12 3 4 5 6 7

下载PDF

与IXYH50N65C3相关器件

型号	品牌	描述	获取价格	数据表
IXYH50N65C3D1	LITTELFUSE	Insulated Gate Bipolar Transistor,	获取价格
IXYH50N65C3H1	IXYS	Insulated Gate Bipolar Transistor,	获取价格
IXYH50N65C3H1	LITTELFUSE	Insulated Gate Bipolar Transistor,	获取价格
IXYH55N120A4	LITTELFUSE	通过利用XPT?薄晶圆技术和第4代 (GenX4?) Trench IGBT流程，这些高达	获取价格
IXYH55N120B4H1	LITTELFUSE	这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发，具有低热	获取价格
IXYH55N120C4	LITTELFUSE	这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发，具有低热	获取价格