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IXYH50N65C3D1 PDF预览

IXYH50N65C3D1

更新时间: 2024-11-18 21:21:55
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
8页 187K
描述
Insulated Gate Bipolar Transistor,

IXYH50N65C3D1 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.64
Base Number Matches:1

IXYH50N65C3D1 数据手册

 浏览型号IXYH50N65C3D1的Datasheet PDF文件第2页浏览型号IXYH50N65C3D1的Datasheet PDF文件第3页浏览型号IXYH50N65C3D1的Datasheet PDF文件第4页浏览型号IXYH50N65C3D1的Datasheet PDF文件第5页浏览型号IXYH50N65C3D1的Datasheet PDF文件第6页浏览型号IXYH50N65C3D1的Datasheet PDF文件第7页 
Advance Technical Information  
XPTTM 650V IGBT  
GenX3TM w/ Diode  
VCES = 650V  
IC110 = 50A  
VCE(sat)  2.10V  
tfi(typ) = 26ns  
IXYH50N65C3D1  
Extreme Light Punch Through  
IGBT for 20-60 kHz Switching  
TO-247 (IXYH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
Tab  
=
E
IC25  
IC110  
IF110  
TC = 25°C  
TC = 110°C  
TC = 110°C  
132  
50  
50  
A
A
A
G = Gate  
E = Emitter  
C
Collector  
Tab = Collector  
ICM  
TC = 25°C, 1ms  
250  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
25  
A
400  
mJ  
SSOA  
V
GE= 15V, TVJ = 150°C, RG = 5  
ICM = 100  
A
μs  
W
Features  
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
8
Optimized for 20-60kHz Switching  
Square RBSOA  
Anti-Parallel Fast Diode  
Avalanche Rated  
Short Circuit Capability  
International Standard Package  
(SCSOA)  
RG = 82, Non Repetitive  
PC  
TC = 25°C  
600  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
High Power Density  
Extremely Rugged  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
Low Gate Drive Requirement  
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
50 A  
1.25 mA  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
High Frequency Power Inverters  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
1.73  
2.10  
2.10  
V
V
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100628(9/14)  

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