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IXYH50N120C3D1 PDF预览

IXYH50N120C3D1

更新时间: 2024-11-21 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 204K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXYH50N120C3D1 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:4.84

IXYH50N120C3D1 数据手册

 浏览型号IXYH50N120C3D1的Datasheet PDF文件第2页浏览型号IXYH50N120C3D1的Datasheet PDF文件第3页浏览型号IXYH50N120C3D1的Datasheet PDF文件第4页浏览型号IXYH50N120C3D1的Datasheet PDF文件第5页浏览型号IXYH50N120C3D1的Datasheet PDF文件第6页浏览型号IXYH50N120C3D1的Datasheet PDF文件第7页 
1200V XPTTM IGBT  
GenX3TM w/ Diode  
VCES = 1200V  
IC100 = 50A  
VCE(sat)  3.5V  
tfi(typ) = 43ns  
IXYH50N120C3D1  
High-Speed IGBT  
for 20-50 kHz Switching  
TO-247 AD  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
TJ = 25°C to 150°C, RGE = 1M  
V
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
Tab  
=
E
IC25  
IC100  
IF110  
ICM  
TC = 25°C (Chip Capability)  
TC = 100°C  
TC = 110°C  
90  
50  
25  
A
A
A
A
G = Gate  
E = Emitter  
C
Collector  
Tab = Collector  
TC = 25°C, 1ms  
210  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 5  
ICM = 100  
A
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
PC  
TC = 25°C  
625  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Optimized for Low Switching Losses  
Square RBSOA  
Positive Thermal Coefficient of  
Vce(sat)  
Anti-Parallel Ultra Fast Diode  
High Current Handling Capability  
International Standard Package  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Advantages  
High Power Density  
Low Gate Drive Requirement  
Applications  
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
50 A  
TJ = 125C  
TJ = 150C  
500 μA  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
3.5  
V
V
4.2  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100388D(04/16)  

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