Datasheet > IXYH50N120C3

IXYH50N120C3

更新时间： 2024-02-21 15:53:51

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	230K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产，具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。它们具有正集电

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数据手册

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IXYH50N120C3 数据手册

1200V XPT^TMIGBT

GenX3^TM

V_CES= 1200V

I_C110= 50A

V_CE(sat)≤ 3.5V

t_fi(typ)= 43ns

IXYH50N120C3

High-Speed IGBT

for 20-50 kHz Switching

TO-247 AD

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 175°C

1200

T_J= 25°C to 175°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

Tab

I_C25

I_C110

I_CM

T_C= 25°C (Chip Capability)

T_C= 110°C

100

G = Gate

E = Emitter

Collector

Tab = Collector

T_C= 25°C, 1ms

240

SSOA

V_GE= 15V, T_VJ= 150°C, R_G= 5Ω

I_CM= 100

(RBSOA)

Clamped Inductive Load

@V_CE≤ V_CES

Features

P_C

T_C= 25°C

750

T_J

T_JM

T_stg

-55 ... +175

175

°C

Optimized for Low Switching Losses

Square RBSOA

Positive Thermal Coefficient of

Vce(sat)

High Current Handling Capability

International Standard Package

-55 ... +175

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

M_d

Mounting Torque

1.13/10

Nm/lb.in.

Weight

Advantages

High Power Density

Low Gate Drive Requirement

Applications

Symbol

Test Conditions

Characteristic Values

High Frequency Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

(T_J= 25°C, Unless Otherwise Specified)

Min.

1200

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

5.0

25 μA

250 μA

T_J= 150°C

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 50A, V_GE= 15V, Note 1

3.1

4.2

3.5

DS100343C(02/13)

12 3 4 5 6 7

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