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IXYB82N120C3H1 PDF预览

IXYB82N120C3H1

更新时间: 2024-11-18 21:18:51
品牌 Logo 应用领域
IXYS 局域网功率控制晶体管
页数 文件大小 规格书
7页 215K
描述
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, PLUS264, 3 PIN

IXYB82N120C3H1 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:4.41其他特性:AVALANCHE RATED
外壳连接:COLLECTOR最大集电极电流 (IC):160 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1040 W子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):295 ns
标称接通时间 (ton):119 nsBase Number Matches:1

IXYB82N120C3H1 数据手册

 浏览型号IXYB82N120C3H1的Datasheet PDF文件第2页浏览型号IXYB82N120C3H1的Datasheet PDF文件第3页浏览型号IXYB82N120C3H1的Datasheet PDF文件第4页浏览型号IXYB82N120C3H1的Datasheet PDF文件第5页浏览型号IXYB82N120C3H1的Datasheet PDF文件第6页浏览型号IXYB82N120C3H1的Datasheet PDF文件第7页 
1200V XPTTM IGBT  
GenX3TM w/ Diode  
VCES = 1200V  
IC110 = 82A  
VCE(sat) 3.2V  
tfi(typ) = 93ns  
IXYB82N120C3H1  
High-Speed IGBT  
for 20-50 kHz Switching  
PLUS264TM  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
G
C
E
TJ = 25°C to 150°C, RGE = 1MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
Tab  
IC25  
TC = 25°C (Chip Capability)  
Lead Current Limit  
TC = 110°C  
164  
160  
82  
A
A
A
A
G = Gate  
E = Emitter  
C
=
Collector  
ILRMS  
IC110  
IF110  
Tab = Collector  
TC = 110°C  
42  
ICM  
TC = 25°C, 1ms  
320  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
41  
A
800  
mJ  
Features  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 164  
A
z
Optimized for Low Switching Losses  
Square RBSOA  
Anti-Parallel Ultra Fast Diode  
Positive Thermal Coefficient of  
Vce(sat)  
Avalanche Rated  
High Current Handling Capability  
International Standard Package  
(RBSOA)  
@VCE VCES  
z
z
z
PC  
TC = 25°C  
1040  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z
z
z
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
FC  
Mounting Force  
30..120 / 6.7..27  
10  
N/lb.  
g
z
Weight  
High Power Density  
z
Low Gate Drive Requirement  
Applications  
z
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
z
z
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
5.0  
z
z
50 μA  
mA  
±100 nA  
z
TJ = 125°C  
TJ = 125°C  
3
IGES  
VCE = 0V, VGE = ±20V  
VCE(sat)  
IC = 82A, VGE = 15V, Note 1  
2.75  
3.50  
3.20  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100355E(6/13)  

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