5秒后页面跳转
IXYH20N65B3 PDF预览

IXYH20N65B3

更新时间: 2022-02-26 13:30:47
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 270K
描述
Advance Technical Information

IXYH20N65B3 数据手册

 浏览型号IXYH20N65B3的Datasheet PDF文件第2页浏览型号IXYH20N65B3的Datasheet PDF文件第3页浏览型号IXYH20N65B3的Datasheet PDF文件第4页浏览型号IXYH20N65B3的Datasheet PDF文件第5页浏览型号IXYH20N65B3的Datasheet PDF文件第6页 
Advance Technical Information  
XPTTM 650V IGBT  
GenX3TM  
VCES = 650V  
IC110 = 20A  
VCE(sat)  2.10V  
tfi(typ) = 87ns  
IXYA20N65B3  
IXYP20N65B3  
IXYH20N65B3  
Extreme Light Punch Through  
IGBT for 5-30kHz Switching  
TO-263 (IXYA)  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-220 (IXYP)  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (Tab)  
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
58  
20  
108  
A
A
A
TO-247 AD (IXYH)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
10  
A
200  
mJ  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 20  
Clamped Inductive Load  
ICM = 40  
A
μs  
W
G
C
E
C (Tab)  
(RBSOA)  
@VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
5
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
(SCSOA)  
RG = 82, Non Repetitive  
PC  
TC = 25°C  
230  
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Optimized for 5-30kHz Switching  
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
International Standard Packages  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-247 & TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Advantages  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
High Power Density  
Extremely Rugged  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
10 A  
150 A  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
1.77  
2.05  
2.10  
V
V
© 2015 IXYS CORPORATION, All Rights Reserved  
DS100644(02/15)  

与IXYH20N65B3相关器件

型号 品牌 描述 获取价格 数据表
IXYH20N65C3 LITTELFUSE 该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT

获取价格

IXYH24N170C LITTELFUSE 这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、

获取价格

IXYH24N170CV1 LITTELFUSE 这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、

获取价格

IXYH24N90C3 LITTELFUSE 该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT

获取价格

IXYH24N90C3D1 LITTELFUSE 该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT

获取价格

IXYH30N120A4 LITTELFUSE 通过利用XPT?薄晶圆技术和第4代 (GenX4?) Trench IGBT流程,这些高达

获取价格