Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/ Diode
VCES = 650V
IC110 = 40A
VCE(sat) 2.35V
tfi(typ) = 20ns
IXYH40N65C3D1
IXYQ40N65C3D1
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
TO-247
(IXYH)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
650
650
V
V
TJ = 25°C to 175°C, RGE = 1M
G
C
Tab
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TO-3P
(IXYQ)
IC25
IC110
IF110
TC = 25°C
TC = 110°C
TC = 110°C
80
40
50
A
A
A
G
ICM
TC = 25°C, 1ms
180
A
C
E
IA
EAS
TC = 25°C
TC = 25°C
20
A
Tab
300
mJ
SSOA
V
GE= 15V, TVJ = 150°C, RG = 10
ICM = 80
A
μs
W
G = Gate
E = Emitter
C
=
Collector
(RBSOA)
Clamped Inductive Load
@VCE VCES
Tab = Collector
tsc
VGE= 15V, VCE = 360V, TJ = 150°C
5
(SCSOA)
RG = 82, Non Repetitive
Features
PC
TC = 25°C
300
Optimized for 20-60kHz Switching
Square RBSOA
Anti-Parallel Fast Diode
Avalanche Rated
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
-55 ... +175
Short Circuit Capability
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Advantages
Md
Mounting Torque
1.13/10
Nm/lb.in
Weight
TO-247
TO-3P
6.0
5.5
g
g
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25C, Unless Otherwise Specified)
Min.
650
3.5
Typ.
Max.
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.0
10 A
1.5 mA
TJ = 150C
TJ = 150C
IGES
VCE = 0V, VGE = 20V
100 nA
VCE(sat)
IC = 40A, VGE = 15V, Note 1
2.0
2.4
2.35
V
V
High Frequency Power Inverters
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DS100625A(11/18)