Datasheet > IXYH30N65C3H1

IXYH30N65C3H1

更新时间： 2023-12-06 20:13:08

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	293K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产，具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。它们具有正集电

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IXYH30N65C3H1 数据手册

Preliminary Technical Information

XPT^TM650V IGBT

GenX3^TMw/ Sonic

Diode

V_CES= 650V

I_C110= 30A

V_CE(sat) 2.7V

t_fi(typ)= 24ns

IXYT30N65C3H1HV

IXYH30N65C3H1

Extreme Light Punch Through

IGBT for 20-60kHz Switching

TO-268HV

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 175°C

650

T_J= 25°C to 175°C, R_GE= 1M

C (Tab)

V_GES

V_GEM

Continuous

Transient

±20

±30

TO-247 AD

I_C25

I_C110

I_F110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

118

I_A

E_AS

T_C= 25°C

Tab

300

SSOA

V_GE= 15V, T_VJ= 150°C, R_G= 10

Clamped Inductive Load

I_CM= 60

μs

G = Gate

E = Emitter

Collector

(RBSOA)

V_CE V_CES

Tab = Collector

t_sc

V_GE= 15V, V_CE= 360V, T_J= 150°C

(SCSOA)

R_G= 82, Non Repetitive

Features

P_C

T_C= 25°C

270

T_J

T_JM

T_stg

-55 ... +175

175

°C



Optimized for 20-60kHz Switching

Square RBSOA

High Voltage

Avalanche Rated

Short Circuit Capability



-55 ... +175

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



Anti-Parallel Sonic Diode

M_d

Mounting Torque

1.13/10

Nm/lb.in

Weight

TO-220

TO-247

Advantages



High Power Density

Extremely Rugged

Low Gate Drive Requirement



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

650

3.5

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

6.0



Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts



50 A

100 nA



T_J= 150C



I_GES

V_CE= 0V, V_GE= 20V



V_CE(sat)

I_C= 30A, V_GE= 15V, Note 1

2.35

2.58

2.70



High Frequency Power Inverters

DS100545A(7/14)

12 3 4 5 6 7

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