Preliminary Technical Information
900V XPTTM IGBT
GenX3TM w/Diode
VCES = 900V
IC90 = 24A
IXYH24N90C3D1
VCE(sat) 3.0V
tfi(typ) = 90ns
High-Speed IGBT
for 20-50 kHz Switching
TO-247
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
900
900
V
V
TJ = 25°C to 150°C, RGE = 1M
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
Tab
IC25
IC90
IF110
TC = 25°C
TC = 90°
TC = 110°C
44
24
15
A
A
A
G = Gate
E = Emitter
C
= Collector
Tab = Collector
ICM
TC = 25°C, 1ms
105
A
IA
EAS
TC = 25°C
TC = 25°C
15
A
150
mJ
Features
SSOA
VGE = 15V, TVJ = 125°C, RG = 10
ICM = 48
A
(RBSOA)
Clamped Inductive Load
@VCE VCES
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
High Current Handling Capability
International Standard Package
PC
TC = 25°C
200
W
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Md
Mounting Torque
1.13/10
6
Nm/lb.in.
g
Advantages
Weight
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25C, Unless Otherwise Specified)
Min.
950
3.5
Typ.
Max.
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.0
75 A
400 μA
TJ = 125C
TJ = 125C
IGES
VCE = 0V, VGE = 20V
100 nA
Lamp Ballasts
VCE(sat)
IC = 24A, VGE = 15V, Note 1
2.30
2.95
3.00
V
V
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DS100396B(02/17)