Datasheet > IXYH40N120C4

IXYH40N120C4

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		栅极驱动双极性晶体管
页数	文件大小	规格书
7页	232K
描述
通过利用XPT?薄晶圆技术和第4代 (GenX4?) Trench IGBT流程，这些高达1200V的器件有助于降低栅极驱动要求和传导损耗。具有低热阻、低损耗、高电流密度和低栅极电荷要求的特点。

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中文翻译

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数据手册

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IXYH40N120C4 数据手册

Advance Technical Information

1200V XPT^TM

GenX4^TMIGBT

V_CES= 1200V

I_C110= 40A

V_CE(sat) 2.50V

t_fi(typ)= 80ns

IXYH40N120C4

High Speed IGBT

for 20-50kHz Switching

TO-247 (IXYH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 175°C

1200

C (Tab)

T_J= 25°C to 175°C, R_GE= 1M

G = Gate

E = Emitter

= Collector

V_GES

V_GEM

Continuous

Transient

±20

±30

Tab = Collector

I_C25

I_C110

T_C= 25°C

T_C= 110°C

120

I_CM

T_C= 25°C, 1ms

230

SSOA

V_GE= 15V, T_VJ= 150°C, R_G= 5

I_CM= 80

(RBSOA)

Clamped Inductive Load

V_CE 0.8 • V_CES

Features

P_C

T_C= 25°C

680



Optimized for Low Switching Losses

Positive Thermal Coefficient of

Vce(sat)

T_J

T_JM

T_stg

-55 ... +175

175

°C



-55 ... +175

International Standard Package

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Advantages

M_d

Mounting Torque

1.13 / 10

Nm/lb.in



High Power Density

Low Gate Drive Requirement

Weight



Applications



Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts



Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

1200

4.0

Typ.

Max.



BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V



6.5



10 A

T_J= 150C

750 A

I_GES

V_CE= 0V, V_GE= 20V

100 nA

V_CE(sat)

I_C= 32A, V_GE= 15V, Note 1

2.05

2.50

DS100950A(1/19)

12 3 4 5 6 7

中文翻译

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