5秒后页面跳转
IXYH20N120C3 PDF预览

IXYH20N120C3

更新时间: 2024-01-03 09:50:11
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 254K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXYH20N120C3 数据手册

 浏览型号IXYH20N120C3的Datasheet PDF文件第2页浏览型号IXYH20N120C3的Datasheet PDF文件第3页浏览型号IXYH20N120C3的Datasheet PDF文件第4页浏览型号IXYH20N120C3的Datasheet PDF文件第5页浏览型号IXYH20N120C3的Datasheet PDF文件第6页浏览型号IXYH20N120C3的Datasheet PDF文件第7页 
1200V XPTTM  
VCES = 1200V  
IC110 = 20A  
VCE(sat)  3.4V  
tfi(typ) = 108ns  
IXYA20N120C3HV  
IXYP20N120C3  
IXYH20N120C3  
GenX3TM IGBTs  
High-Speed IGBT  
for 20-50 kHz Switching  
TO-263HV (IXYA)  
G
E
Symbol  
Test Conditions  
Maximum Ratings  
C (Tab)  
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
V
TO-220 (IXYP)  
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
Tab  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
40  
20  
96  
A
A
A
E
TO-247 AD (IXYH)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
10  
A
400  
mJ  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 10  
Clamped Inductive Load  
ICM = 40  
A
G
C
E
(RBSOA)  
@VCE VCES  
Tab  
=
PC  
TC = 25°C  
278  
W
G = Gate  
C
Collector  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
E = Emitter  
Tab = Collector  
Features  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
High Voltage Package  
Optimized for Low Switching Losses  
Square RBSOA  
Positive Thermal Coefficient of  
Vce(sat)  
Md  
FC  
Mounting Torque (TO-220 & TO247)  
Mounting Force (TO-263)  
1.13/10  
10..65 / 22..14.6  
Nm/lb.in.  
N/lb  
Avalanche Rated  
International Standard Packages  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
15 A  
TJ = 150C  
TJ = 150C  
500 μA  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
3.4  
V
V
4.0  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100484B(02/13)  

与IXYH20N120C3相关器件

型号 品牌 描述 获取价格 数据表
IXYH20N120C3D1 LITTELFUSE 该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT

获取价格

IXYH20N65B3 IXYS Advance Technical Information

获取价格

IXYH20N65B3 LITTELFUSE 该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT

获取价格

IXYH20N65C3 LITTELFUSE 该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT

获取价格

IXYH24N170C LITTELFUSE 这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、

获取价格

IXYH24N170CV1 LITTELFUSE 这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、

获取价格