Advance Technical Information
High Voltage XPTTM IGBT
VCES = 4500V
IC110 = 17A
VCE(sat) 3.9V
IXYF30N450
(Electrically Isolated Tab)
ISOPLUS i4-PakTM
Symbol
VCES
Test Conditions
Maximum Ratings
TC = 25°C to 150°C
4500
4500
V
V
VCGR
TJ = 25°C to 150°C, RGE = 1M
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
1
2
Isolated Tab
5
IC25
IC110
ICM
TC = 25°C
23
17
A
A
A
1 = Gate
2 = Emitter
5 = Collector
TC = 110°C
TC = 25°C, 1ms
190
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 15
Clamped Inductive Load
ICM = 90
3600
A
V
PC
TC = 25°C
230
W
Features
TJ
-55 ... +150
150
°C
°C
°C
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
TJM
Tstg
-55 ... +150
4000V~ Electrical Isolation
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
FC
Mounting Force
20..120 / 4.5..27
Nm/lb.in.
VISOL
Weight
50/60Hz, 1 Minute
4000
5
V~
g
Advantages
Low Gate Drive Requirement
High Power Density
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Applications
Min.
4500
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
5.0
V
25 μA
μA
Note 2, TJ = 100°C
100
IGES
VCE = 0V, VGE = ± 25V
±200 nA
AC Switches
VCE(sat)
IC = 30A, VGE = 15V, Note 1
3.2
4.5
3.9
V
V
TJ = 125°C
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DS100569(11/13)