Datasheet > IXYF16N250CV1

IXYF16N250CV1

更新时间： 2023-12-06 20:13:06

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管高压
页数	文件大小	规格书
8页	238K
描述
这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发，具有低热阻、低尾电流、低能量损耗和快速切换等特点。凭借通态电压的正温度系数，这些高压IGBT可用于并联，相比串联低电压器件更加

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IXYF16N250CV1 数据手册

Advance Technical Information

High Voltage XPT^TM

IGBT w/ Diode

V_CES= 2500V

I_C110= 14A

V_CE(sat) 4.0V

t_fi(typ)= 250ns

IXYF16N250CV1

(Electrically Isolated Tab)

ISOPLUS i4-Pak^TM

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 175°C

2500

T_J= 25°C to 175°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

±20

±30

Isolated Tab

I_C25

I_C110

I_F110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

1 = Gate

2 = Emitter

5 = Collector

160

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 150°C, R_G= 10

Clamped Inductive Load

I_CM= 64

1500

P_C

T_C= 25°C

180

Features

T_J

T_JM

T_stg

-55 ... +175

175

°C



-55 ... +175

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



Isolated Mounting Surface

2500V~ Electrical Isolation



F_C

Mounting Force

20..120 / 4.5..27

Nm/lb.in.

High Blocking Voltage



High Peak Current Capability

Low Saturation Voltage

V_ISOL

Weight

50/60Hz, 1 Minute

2500

Advantages



Low Gate Drive Requirement

High Power Density



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

2500

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

Applications

5.0



Switch-Mode and Resonant-Mode

50 A

100 nA

Power Supplies

Uninterruptible Power Supplies (UPS)

Laser Generators

Capacitor Discharge Circuits



V_CE= 0.8 • V_CES, V_GE= 0V Note 2, T_J= 150C



I_GES

V_CE= 0V, V_GE= 20V



V_CE(sat)

I_C= 16A, V_GE= 15V, Note 1

3.30

4.75

4.00



AC Switches

T_J= 150C

DS100821A(4/17)

12 3 4 5 6 7 8

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