Datasheet > IXTS01N90P-89

IXTS01N90P-89

更新时间： 2024-09-10 20:55:31

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	233K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXTS01N90P-89 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.35
Base Number Matches：	1

IXTS01N90P-89 数据手册

Advance Technical Information

Polar^TM

Power MOSFET

IXTS01N90P-89

IXTS01N90P-223

V_DSS= 900V

I_D25= 100mA

R_DS(on) 75

N-Channel Enhancement Mode

SOT-89

Symbol

V_DSS

Test Conditions

Maximum Ratings

D (Tab)

T_J= 25C to 150C

900

SOT-223

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

100

450

D (Tab)

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

G = Gate

= Drain

S = Source

Tab = Drain

T_J

-55 ... +150

150

C

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Weight

SOT-89

SOT-223

0.35

0.40

Features



High Voltage, Low Leakage Mosfet

in SMD Package

Suitable for V_GE= 5V Drive



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 100μA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

900



DC-DC Converters

Switch-Mode and Resonant-Mode

1.5

3.0



Power Supplies

25 nA



Protection Circuits

I_DSS

25 nA

T_J= 125C

A

R_DS(on)

V_GS= 5V, I_D= 0.5 • I_D25, Note 1

V_GS= 10V, I_D= 0.5 • I_D25, Note 1



DS100857A(9/17)

12 3 4 5 6 7

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