Datasheet > IXTT100N25P

IXTT100N25P

更新时间： 2024-04-09 18:40:55

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	341K
描述
Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡的器件解决方案。这些器件包含了Polar技术平台，以实现低导通电阻（Rdson）。 Polar标准MOS

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IXTT100N25P 数据手册

IXTK 100N25P

IXTQ 100N25P

IXTT 100N25P

V_DSS= 250 V

I_D25= 100 A

R_DS(on)≤ 27 mΩ

PolarHT^TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXTK)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25° C to 150° C

T_J= 25° C to 150° C; R_GS= 1 MΩ

250

V_GSS

V_GSM

Continuous

Transient

D (TAB)

I_D25

T_C=25° C

100

I_D(RMS)

I_DM

External lead current limit

T_C= 25° C, pulse width limited by T_JM

TO-3P (IXTQ)

250

I_AR

T_C=25° C

E_AR

E_AS

T_C=25° C

2.0

(TAB)

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 4 Ω

V/ns

TO-268 (IXTT)

T_C=25° C

600

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

D (TAB)

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

G = Gate

S = Source

D = Drain

TAB = Drain

M_d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-3P

TO-264

TO-268

5.5

5.0

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Symbol

Test Conditions

Characteristic Values

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250µA

V_GS= 20 V_DC, V_DS= 0

250

2.5

5.0

Advantages

100

Easy to mount

Space savings

High power density

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

T_J= 125° C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

27 mΩ

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

DS99118E(12/05)

12 3 4 5 6

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