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IXTQ52N30P PDF预览

IXTQ52N30P

更新时间: 2024-11-05 03:13:39
品牌 Logo 应用领域
IXYS 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
5页 577K
描述
PolarHT Power MOSFET

IXTQ52N30P 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-3P包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:4.3
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:300 V最大漏极电流 (Abs) (ID):52 A
最大漏极电流 (ID):52 A最大漏源导通电阻:0.066 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):400 W最大脉冲漏极电流 (IDM):150 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTQ52N30P 数据手册

 浏览型号IXTQ52N30P的Datasheet PDF文件第2页浏览型号IXTQ52N30P的Datasheet PDF文件第3页浏览型号IXTQ52N30P的Datasheet PDF文件第4页浏览型号IXTQ52N30P的Datasheet PDF文件第5页 
Advanced Technical Information  
PolarHTTM  
Power MOSFET  
IXTQ52N30P  
IXTT52N30P  
VDSS  
ID25  
= 300 V  
= 52 A  
RDS(on) = 66 mΩ  
N-Channel Enhancement Mode  
Symbol  
TestConditions  
Maximum Ratings  
TO-3P(IXTQ)  
VDSS  
VDGR  
T
= 25°C to 150°C  
300  
300  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25°C  
52  
A
A
G
C
(TAB)  
TC = 25°C, pulse width limited by TJM  
150  
E
IAR  
TC = 25°C  
52  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
TO-268 (IXTT)  
1.0  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 4 Ω  
,
10  
V/ns  
G
S
TC = 25°C  
400  
W
D (TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque  
(TO-3P)  
1.13/10 Nm/lb.in.  
Features  
Weight  
TO-3P  
5.5  
5.0  
g
g
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
TO-268  
z
z
Symbol  
TestConditions  
Characteristic Values  
Low package inductance  
- easy to drive and to protect  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
300  
V
V
2.5  
5.0  
Advantages  
100 nA  
z
Easy to mount  
z
IDSS  
VDS = VDSS  
VGS = 0 V  
25 µA  
250 µA  
Space savings  
z
TJ = 125°C  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
57  
66 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99115A(10/04)  
© 2004 IXYS All rights reserved  

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