5秒后页面跳转
IXTQ60N10T PDF预览

IXTQ60N10T

更新时间: 2024-11-18 19:59:39
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 168K
描述
Power Field-Effect Transistor, 60A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

IXTQ60N10T 技术参数

生命周期:Transferred零件包装代码:TO-3P
包装说明:PLASTIC, TO-3P, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76其他特性:AVALANCHE RATED
雪崩能效等级(Eas):500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):60 A最大漏极电流 (ID):60 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):176 W
最大脉冲漏极电流 (IDM):180 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTQ60N10T 数据手册

 浏览型号IXTQ60N10T的Datasheet PDF文件第2页浏览型号IXTQ60N10T的Datasheet PDF文件第3页浏览型号IXTQ60N10T的Datasheet PDF文件第4页浏览型号IXTQ60N10T的Datasheet PDF文件第5页 
Advance Technical Information  
TrenchTM  
Power MOSFET  
VDSS = 100V  
ID25 = 60A  
RDS(on) 18.0mΩ  
IXTQ60N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-3P  
G
D
Symbol  
Test Conditions  
Maximum Ratings  
S
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
Tab  
G = Gate  
S = Source  
D
= Drain  
VGSM  
Transient  
± 30  
V
Tab = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
60  
180  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
10  
A
500  
mJ  
PD  
TC = 25°C  
176  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
z 175°C Operating Temperature  
z Avalanche Rated  
z
Low RDS(on)  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Fast Intrinsic Diode  
z Low Package Inductance  
Md  
Mounting Torque  
1.13/10  
5.5  
Nm/lb.in.  
g
Weight  
Advantages  
z High Power Density  
z Easy to Mount  
z Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
100  
2.5  
Typ.  
Max.  
DC/DC Converters and Off-Line UPS  
Primary Switch for 24V and 48V  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Systems  
z
4.5  
High Current Switching Applications  
Distributed Power Architechtures  
z
± 100 nA  
and VRMs  
Electronic Valve Train Systems  
High Voltage Synchronous Recifier  
z
IDSS  
1 μA  
100 μA  
z
TJ = 150°C  
RDS(on)  
VGS = 10V, ID = 25A, Note 1  
14.8  
18.0 mΩ  
DS100289(10/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  

与IXTQ60N10T相关器件

型号 品牌 获取价格 描述 数据表
IXTQ60N20L2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTQ60N20L2 IXYS

获取价格

Power Field-Effect Transistor, 60A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IXTQ60N20T IXYS

获取价格

N-Channel Enhancement Mode For PDP Drivers Avalanche Rated
IXTQ60N20T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXTQ62N15P IXYS

获取价格

PolarHT Power MOSFET
IXTQ62N15P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTQ64N25 IXYS

获取价格

PolarHT Power MOSFET
IXTQ64N25P IXYS

获取价格

PolarHT Power MOSFET
IXTQ64N25P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTQ69N30 IXYS

获取价格

PolarHT Power MOSFET