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IXTQ60N10T PDF预览

IXTQ60N10T

更新时间: 2024-11-05 19:59:39
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 168K
描述
Power Field-Effect Transistor, 60A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

IXTQ60N10T 技术参数

生命周期:Transferred零件包装代码:TO-3P
包装说明:PLASTIC, TO-3P, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76其他特性:AVALANCHE RATED
雪崩能效等级(Eas):500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):60 A最大漏极电流 (ID):60 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):176 W
最大脉冲漏极电流 (IDM):180 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTQ60N10T 数据手册

 浏览型号IXTQ60N10T的Datasheet PDF文件第2页浏览型号IXTQ60N10T的Datasheet PDF文件第3页浏览型号IXTQ60N10T的Datasheet PDF文件第4页浏览型号IXTQ60N10T的Datasheet PDF文件第5页 
Advance Technical Information  
TrenchTM  
Power MOSFET  
VDSS = 100V  
ID25 = 60A  
RDS(on) 18.0mΩ  
IXTQ60N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-3P  
G
D
Symbol  
Test Conditions  
Maximum Ratings  
S
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
Tab  
G = Gate  
S = Source  
D
= Drain  
VGSM  
Transient  
± 30  
V
Tab = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
60  
180  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
10  
A
500  
mJ  
PD  
TC = 25°C  
176  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
z 175°C Operating Temperature  
z Avalanche Rated  
z
Low RDS(on)  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Fast Intrinsic Diode  
z Low Package Inductance  
Md  
Mounting Torque  
1.13/10  
5.5  
Nm/lb.in.  
g
Weight  
Advantages  
z High Power Density  
z Easy to Mount  
z Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
100  
2.5  
Typ.  
Max.  
DC/DC Converters and Off-Line UPS  
Primary Switch for 24V and 48V  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Systems  
z
4.5  
High Current Switching Applications  
Distributed Power Architechtures  
z
± 100 nA  
and VRMs  
Electronic Valve Train Systems  
High Voltage Synchronous Recifier  
z
IDSS  
1 μA  
100 μA  
z
TJ = 150°C  
RDS(on)  
VGS = 10V, ID = 25A, Note 1  
14.8  
18.0 mΩ  
DS100289(10/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  

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