Datasheet > IXTQ60N20T

IXTQ60N20T

更新时间： 2024-11-18 12:28:27

品牌	Logo	应用领域
IXYS		驱动器光电二极管
页数	文件大小	规格书
4页	140K
描述
N-Channel Enhancement Mode For PDP Drivers Avalanche Rated

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中文翻译

获取价格

数据手册

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IXTQ60N20T 数据手册

Trench^TM

Power MOSFET

V_DSS= 200V

I_D25= 60A

R_DS(on)≤ 40mΩ

IXTA60N20T

IXTP60N20T

IXTQ60N20T

TO-263 AA (IXTA)

N-Channel Enhancement Mode

For PDP Drivers

Avalanche Rated

D (Tab)

TO-220AB (IXTP)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

200

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

D (Tab)

TO-3P (IXTQ)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

150

I_A

T_C= 25°C

700

500

E_AS

P_D

D (Tab)

= Drain

= Gate

= Source

T_J

-55 ... +175

175

°C

Tab = Drain

T_JM

T_stg

-55 ... +175

Features

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 Seconds

300

260

°C

^zHigh Current Handling Capability

^z175°C Operating Temperature

^zAvalanche Rated

M_d

Mounting Torque (TO-220 &TO-3P)

1.13 / 10

Nm/lb.in.

^zFast Intrinsic Rectifier

Weight

TO-263

TO-220

TO-3P

2.5

3.0

5.5

Low R_DS(on)

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

200

3.0

Applications

5.0

±200 nA

μA

^zDC-DC Converters

^zBattery Chargers

I_DSS

^zSwitch-Mode and Resonant-Mode

Power Supplies

T_J= 150°C

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

250 μA

40 mΩ

^zDC Choppers

^zAC Motor Drives

R_DS(on)

^zUninterruptible Power Supplies

^zHigh Speed Power Switching

Applications

DS99359B(7/10)

12 3 4

中文翻译

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