Datasheet > IXTQ69N30

IXTQ69N30

更新时间： 2024-11-17 22:11:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	108K
描述
PolarHT Power MOSFET

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中文翻译

获取价格

数据手册

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IXTQ69N30 数据手册

IXTQ 69N30P

IXTT 69N30P

V_DSS

I_D25

= 300 V

= 69 A

PolarHT^TM

Power MOSFET

R_DS(on)= 49 mΩ

N-Channel Enhancement Mode

TO-3P(IXTQ)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

300

V_GSS

V_GSM

Transient

±20

±30

(TAB)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

200

I_AR

T_C= 25°C

TO-268 (IXTT)

E_AR

E_AS

T_C= 25°C

1.5

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4 Ω

V/ns

D (TAB)

T_C= 25°C

500

G = Gate

D = Drain

S = Source

TAB = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

^!International standard packages

^!Unclamped Inductive Switching (UIS)

rated

^!Low package inductance

- easy to drive and to protect

T_L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M_d

Mounting torque

(TO-3P)

1.13/10 Nm/lb.in.

Weight

TO-3P

TO-268

5.5

5.0

Advantages

Symbol

TestConditions

Characteristic Values

Easy to mount

Space savings

High power density

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250µA

V_GS= ±20 V_DC, V_DS= 0

300

2.5

5.0

±100

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

T_J= 125°C

PolarHT^TMDMOStransistors

utilize proprietary designs and

process. US patent is pending.

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

49 mΩ

DS99078A(04/04)

12 3 4 5

中文翻译

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