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IXTR120P20T PDF预览

IXTR120P20T

更新时间: 2024-10-03 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 开关驱动高压
页数 文件大小 规格书
7页 223K
描述
Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱动电路,避免使用N通道MOSFET通常涉及的额外“高压侧”驱动电路。 这让设计人员可以减少元件数量,从而简

IXTR120P20T 数据手册

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Preliminary Technical Information  
TrenchPTM  
Power MOSFET  
VDSS = - 200V  
ID25 = - 90A  
IXTR120P20T  
RDS(on)  
trr  
32mΩ  
300ns  
P-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
ISOPLUS247  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 200  
- 200  
V
V
VDGR  
G
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
Isolated Tab  
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 90  
A
A
G = Gate  
S = Source  
D = Drain  
- 400  
IA  
EAS  
TC = 25°C  
TC = 25°C  
-100  
3
A
J
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
Features  
595  
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
2500V~ Electrical Isolation  
Avalanche Rated  
Extended FBSOA  
Fast Intrinsic Rectifier  
Low RDS(ON) and QG  
z
z
z
z
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
z
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V∼  
FC  
20..120/4.5..27  
5
N/lb.  
g
Weight  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
- 200  
- 2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
z
- 4.5  
z
±200 nA  
z
z
Current Regulators  
IDSS  
- 25 μA  
- 300 μA  
z
Battery Charger Applications  
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = - 60A, Note 1  
32 mΩ  
DS100403A(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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