Datasheet > IXTQ52P10P

IXTQ52P10P

更新时间： 2024-11-06 04:59:07

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	186K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

数据手册

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IXTQ52P10P 数据手册

PolarP^TM

Power MOSFETs

V_DSS= - 100V

I_D25= - 52A

IXTA52P10P

IXTP52P10P

IXTQ52P10P

IXTH52P10P

R_DS(on)

≤

50mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-3P (IXTQ)

TO-263 AA (IXTA)

TO-220AB (IXTP)

D (Tab)

Tab

TO-247 (IXTH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

-100

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

D (Tab)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 52

-130

G = Gate

= Drain

S = Source

Tab = Drain

I_A

T_C= 25°C

- 52

1.5

E_AS

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

Features

300

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

^zInternational Standard Packages

^zFast Intrinsic Diode

^zDynamic dv/dt Rated

^zAvalanche Rated

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic body for 10s

300

260

°C

^zRugged PolarP^TMProcess

^zLow Q_Gand R_ds(on)

M_d

Mounting Torque

(TO-3P,TO-220,TO-247)

1.13/10

Nm/lb.in.

^zLow Drain-to-Tab Capacitance

^zLow Package Inductance

Weight

TO-263

TO-220

TO-3P

2.5

3.0

5.5

6.0

TO-247

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

-100

- 2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

- 4.0

Applications

±100 nA

High-Side Switching

Push-Pull Amplifiers

DC Choppers

Current Regulators

I_DSS

-10 μA

-150 μA

T_J= 125°C

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

50 mΩ

Automatic Test Equipment

DS99912C(01/13)

12 3 4 5 6 7

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