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IXTH10N100D2 PDF预览

IXTH10N100D2

更新时间: 2024-11-05 14:51:43
品牌 Logo 应用领域
IXYS 局域网开关晶体管
页数 文件大小 规格书
5页 164K
描述
Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

IXTH10N100D2 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TO-247包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:5.21Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (ID):10 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):695 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTH10N100D2 数据手册

 浏览型号IXTH10N100D2的Datasheet PDF文件第2页浏览型号IXTH10N100D2的Datasheet PDF文件第3页浏览型号IXTH10N100D2的Datasheet PDF文件第4页浏览型号IXTH10N100D2的Datasheet PDF文件第5页 
Preliminary Technical Information  
Depletion Mode  
MOSFET  
VDSX = 1000V  
ID(on) > 10A  
IXTH10N100D2  
IXTT10N100D2  
RDS(on) 1.5  
D
N-Channel  
TO-247 (IXTH)  
G
S
G
D
D (Tab)  
S
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TO-268 (IXTT)  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1000  
1000  
V
V
VDGX  
G
VGSX  
VGSM  
Continuous  
Transient  
20  
30  
V
V
S
D (Tab)  
PD  
TC = 25C  
695  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
6
4
g
g
• Normally ON Mode  
International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1000  
- 2.5  
Typ.  
Max.  
• Easy to Mount  
• Space Savings  
• High Power Density  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250A  
VDS = 25V, ID = 1mA  
VGS = 20V, VDS = 0V  
VDS = VDSX, VGS = - 5V  
V
V
- 4.5  
Applications  
100 nA  
• Audio Amplifiers  
• Start-up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
IDSX(off)  
10 A  
250 A  
TJ = 125C  
RDS(on)  
ID(on)  
VGS = 0V, ID = 5A, Note 1  
1.5  
VGS = 0V, VDS = 25V, Note 1  
10  
A
DS100326A(4/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

IXTH10N100D2 替代型号

型号 品牌 替代类型 描述 数据表
IXTH10N100D IXYS

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Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Met

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