是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-247 | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.21 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1000 V | 最大漏极电流 (ID): | 10 A |
最大漏源导通电阻: | 1.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-247 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 695 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXTH10N100D | IXYS |
类似代替 |
Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Met | |
IXFH10N100P | IXYS |
类似代替 |
Polar Power MOSFET HiPerFET | |
IXTT10N100D2 | IXYS |
功能相似 |
Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Met |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH10N60 | IXYS |
获取价格 |
10 AMP, 600V, 0.55-ohm / 0.7-ohm | |
IXTH10N60A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-247 | |
IXTH10N80 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH10N90 | IXYS |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Meta | |
IXTH10N95 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH10P45 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-218VAR | |
IXTH10P50 | IXYS |
获取价格 |
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated | |
IXTH10P50P | IXYS |
获取价格 |
PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated | |
IXTH10P50P | LITTELFUSE |
获取价格 |
Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻( | |
IXTH10P60 | IXYS |
获取价格 |
Standard Power MOSFET |