Datasheet > IXTH11P50

IXTH11P50

更新时间： 2024-11-06 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		转换器
页数	文件大小	规格书
6页	155K
描述
P通道标准功率MOSFET的额定电压范围为-100V至-600V，并采用业内流行的TO-247和可表面贴装的TO-268封装。这些产品是降压转换器以及需要接地的负载的理想选择。它们可与对等的N

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数据手册

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IXTH11P50 数据手册

V_DSS= - 500V

I_D25= - 11A

Power MOSFETs

IXTH11P50

IXTT11P50

R_DS(on)

≤

750mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-268 (IXTT)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

- 500

TO-247 (IXTH)

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 11

- 44

D (Tab)

I_A

T_C= 25°C

- 11

E_AS

G = Gate

= Drain

S = Source

Tab = Drain

P_D

T_C= 25°C

300

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Features

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

International Standard Packages

Low R_{DS (on)}HDMOS^TMProcess

Rugged Polysilicon Gate Cell Structure

Avalanche Rated

Weight

TO-268

TO-247

Low Package Inductance

- Easy to Drive and to Protect

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

Advantages

BV_DSS

V_GS(th)

V_GS= 0V, I_D= - 250μA

BV_DSSTemperature Coefficient

- 500

%/K

Easy to Mount

Space Savings

High Power Density

0.09

V_DS= V_GS, I_D= - 250μA

- 3.0

- 5.0

V_GS(th)Temperature Coefficient

- 0.25

%/K

I_GSS

I_DSS

V_GS= ± 20V, V_DS= 0V

±100 nA

V_DS= V_DSS, V_GS= 0V

- 200 μA

T_J= 125°C

-1 mA

R_DS(on)

V_GS= 10V, I_D= - 5.5A, Note 1

R_DS(on)Temperature Coefficient

750 mΩ

0.92 %/K

DS94535L(01/13)

12 3 4 5 6

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