Datasheet > IXTH110N25T

IXTH110N25T

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
6页	226K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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中文翻译

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数据手册

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IXTH110N25T 数据手册

Trench^TM

Power MOSFET

V_DSS= 250V

I_D25= 110A

R_DS(on) 26m

IXTH110N25T

IXTV110N25TS

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

TO-247 (IXTH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

D (Tab)

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

250

V_DGR

PLUS220SMD(IXTV_S)

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

110

300

I_A

E_AS

T_C= 25C

D (Tab)

P_D

T_C= 25C

694

G = Gate

S = Source

= Drain

dv/dt

I_S I_DM, V_DD V_DSS, T_J 150°C

V/ns

Tab = Drain

T_J

-55 to +150

+150

C

T_JM

T_stg

-55 to +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features



M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in

N/lb

International Standard Packages

Avalanche Rated

High Current Handling Capability

Fast Intrinsic Rectifier

Low R_DS(on)



F_C

Mounting force (PLUS220SMD)

11..65/2.5..14.6

Weight

TO-247

PLUS220SMD

Advantages



Symbol

Test Conditions

Characteristic Values

Easy to Mount

Space Savings

High Power Density



(T_J= 25C, Unless Otherwise Specified)

Min.

250

3.0

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 1mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

5.0

Applications

200 nA

A

I_DSS



DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

DC Choppers

AC Motor Drives

Uninterruptible Power Supplies



T_J= 125C

V_GS= 10V, I_D= 0.5 • I_D25, Notes 1, 2

250 μA

26 m



R_DS(on)



DS99904C(5/15)

12 3 4 5 6

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