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IXTH12N100L PDF预览

IXTH12N100L

更新时间: 2024-11-05 21:13:31
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 143K
描述
Power Field-Effect Transistor, 12A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

IXTH12N100L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.7
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:1.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):400 W
最大脉冲漏极电流 (IDM):25 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTH12N100L 数据手册

 浏览型号IXTH12N100L的Datasheet PDF文件第2页浏览型号IXTH12N100L的Datasheet PDF文件第3页浏览型号IXTH12N100L的Datasheet PDF文件第4页浏览型号IXTH12N100L的Datasheet PDF文件第5页 
LinearTM Power  
MOSFET w/ Extended  
FBSOA  
VDSS = 1000V  
ID25 = 12A  
RDS(on) 1.3Ω  
IXTH12N100L  
N-Channel Enhancement Mode  
AvalancheRated  
TO-247  
Symbol  
VDSS  
TestConditions  
MaximumRatings  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
D
Tab  
S
ID25  
IDM  
TC =25°C  
12  
25  
A
A
G = Gate  
S = Source  
D
= Drain  
TC = 25°C, Pulse Width Limited by TJM  
Tab = Drain  
IA  
EAS  
TC =25°C  
TC =25°C  
12  
A
J
1.5  
PD  
TC =25°C  
400  
W
TJ  
-55...+150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55...+150  
International Standard Package  
Designed for Linear Operation  
AvalancheRated  
Molding Epoxy Meets UL94 V-0  
FlammabilityClassification  
TL  
1.6mm (0.063 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
Md  
MountingTorque  
1.13/10  
6
Nm/lb.in.  
Weight  
g
Advantages  
Easy to Mount  
SpaceSavings  
High Power Density  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
3.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±30V, VDS = 0V  
VDS = VDSS,VGS = 0V  
V
V
ProgrammableLoads  
CurrentRegulators  
DC-DCConverters  
BatteryChargers  
DCChoppers  
Temperature and Lighting Controls  
5.5  
±100 nA  
IDSS  
50 μA  
500 μA  
TJ = 125°C  
RDS(on)  
VGS = 20V, ID = 0.5 • IDSS, Note 1  
1.3  
Ω
DS99126B(04/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  

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