是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-247AD |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.7 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 1500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1000 V | 最大漏极电流 (Abs) (ID): | 12 A |
最大漏极电流 (ID): | 12 A | 最大漏源导通电阻: | 1.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247AD |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 400 W |
最大脉冲漏极电流 (IDM): | 25 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH12N120 | IXYS |
获取价格 |
Power MOSFET, Avalanche Rated High Voltage | |
IXTH12N150 | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTH12N45 | IXYS |
获取价格 |
12 AMPS, 450-500V, 0.4OM/0.5OM | |
IXTH12N45A | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH12N45MA | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH12N45MB | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH12N50 | IXYS |
获取价格 |
12 AMPS, 450-500V, 0.4OM/0.5OM | |
IXTH12N50A | IXYS |
获取价格 |
Standard Power MOSFET | |
IXTH12N50MA | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH12N50MB | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |