Datasheet > IXTH12N100L

IXTH12N100L

更新时间： 2024-11-05 14:51:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	140K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTH12N100L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

IXTH12N100L 数据手册

Linear^TMPower

MOSFET w/ Extended

FBSOA

V_DSS= 1000V

I_D25= 12A

R_DS(on)≤ 1.3Ω

IXTH12N100L

N-Channel Enhancement Mode

AvalancheRated

TO-247

Symbol

V_DSS

TestConditions

MaximumRatings

T_J= 25°C to 150°C

1000

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

±30

±40

Tab

I_D25

I_DM

T_C=25°C

G = Gate

S = Source

= Drain

T_C= 25°C, Pulse Width Limited by T_JM

Tab = Drain

I_A

E_AS

T_C=25°C

1.5

P_D

T_C=25°C

400

T_J

-55...+150

150

°C

T_JM

T_stg

Features

-55...+150

• International Standard Package

• Designed for Linear Operation

• AvalancheRated

• Molding Epoxy Meets UL94 V-0

FlammabilityClassification

T_L

1.6mm (0.063 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

T_SOLD

M_d

MountingTorque

1.13/10

Nm/lb.in.

Weight

Advantages

• Easy to Mount

• SpaceSavings

• High Power Density

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1000

3.5

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS,V_GS= 0V

• ProgrammableLoads

• CurrentRegulators

• DC-DCConverters

• BatteryChargers

• DCChoppers

• Temperature and Lighting Controls

5.5

±100 nA

I_DSS

50 μA

500 μA

T_J= 125°C

R_DS(on)

V_GS= 20V, I_D= 0.5 • I_DSS, Note 1

1.3

DS99126B(04/10)

12 3 4 5 6

中文翻译

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