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IXTH12N120 PDF预览

IXTH12N120

更新时间: 2024-11-05 03:13:43
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IXYS 晶体晶体管功率场效应晶体管开关脉冲高压局域网
页数 文件大小 规格书
4页 546K
描述
Power MOSFET, Avalanche Rated High Voltage

IXTH12N120 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:TO-247AD, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.67
雪崩能效等级(Eas):1000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1200 V
最大漏极电流 (ID):12 A最大漏源导通电阻:1.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):48 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTH12N120 数据手册

 浏览型号IXTH12N120的Datasheet PDF文件第2页浏览型号IXTH12N120的Datasheet PDF文件第3页浏览型号IXTH12N120的Datasheet PDF文件第4页 
VDSS = 1200 V  
ID(cont) = 12 A  
IXTH 12N120  
Power MOSFET, Avalanche Rated  
High Voltage  
RDS(on)  
=
1.4 Ω  
Preliminary Data Sheet  
Symbol TestConditions  
Maximum Ratings  
TO-247 AD  
VDSS  
VDGR  
TJ  
TJ  
= 25°C to 150°C  
1200  
1200  
V
V
= 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
30  
40  
V
V
D (TAB)  
VGSM  
ID25  
IDM  
IAR  
TC  
TC  
= 25°C  
12  
48  
12  
A
A
A
= 25°C, pulse width limited by TJM  
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
EAR  
EAS  
T
= 25°C  
= 25°C  
30  
1.0  
mJ  
J
TCC  
PD  
TC  
= 25°C  
500  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z International standard package  
JEDEC TO-247 AD  
-55 ... +150  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
z Low RDS (on) HDMOSTM process  
Weight  
6
g
z Rugged polysilicon gate cell structure  
z Fast switching times  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
z
Switch-mode and resonant-mode  
power supplies  
Motor controls  
Uninterruptible Power Supplies (UPS)  
DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
z
z
VDSS  
VGS = 0 V, ID = 1 mA  
1200  
3
V
V
VGS(th)  
VDS = VGS, ID = 250 µA  
5
Advantages  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
100 nA  
z
Easy to mount with 1 screw  
(isolated mounting screw hole)  
Space savings  
High power density  
VDS = V  
T = 25°C  
25 µA  
VGS = 0DVSS  
TJJ = 125°C  
3
mA  
z
z
RDS(on)  
V
= 10 V, ID = 0.5 • I  
1.4  
PuGSlse test, t 300 µs,Dd25uty cycle d 2 %  
DS98937E(04/04)  
© 2004 IXYS All rights reserved  

IXTH12N120 替代型号

型号 品牌 替代类型 描述 数据表
IXFH12N120 IXYS

完全替代

High Voltage HiPerFET Power MOSFET
IXFH12N120P IXYS

类似代替

Polar Power MOSFET HiPerFET

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