Datasheet > IXTH12N150

IXTH12N150

更新时间： 2024-11-05 20:01:35

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
5页	175K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTH12N150 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

IXTH12N150 数据手册

High Voltage

Power MOSFET

V_DSS= 1500V

I_D25= 12A

R_DS(on) 2.2

IXTT12N150

IXTH12N150

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-268 (IXTT)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

1500

D (Tab)

V_DGR

V_GSS

V_GSM

Continuous

Transient

30

40

TO-247 (IXTH)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

I_A

E_AS

T_C= 25°C

D (Tab)

750

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

G = Gate

S = Source

= Drain

890

Tab = Drain

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

T_L

T_SOLD

1.6mm (0.062 in.) From Case for 10s

Plastic Body for 10s

300

260

C

Features

M_d

Mounting Torque

1.13 / 10

Nm/lb.in.



International Standard Packages

Molding Epoxies Weet UL 94 V-0

Flammability Classification

Fast Intrinsic Diode

Weight

TO-268

TO-247

4.0

6.0



Low Package Inductance

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

1500

2.5

Typ.

Max.

Advantages

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250A

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V



Easy to Mount

Space Savings

High Power Density



4.5



100 nA

I_DSS

25 A

500 A

Applications

T_J= 125C



High Voltage Power Supplies

Capacitor Discharge

Pulse Circuits

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

2.2





DS100425C(6/15)

12 3 4 5

中文翻译

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