IXTH11N80

更新时间： 2024-09-14 22:11:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	102K
描述
MegaMOSFET

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中文翻译

获取价格

数据手册

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IXTH11N80 数据手册

V_DSS

I_D25

R_DS(on)

MegaMOS^TMFET

IXTH / IXTM 11N80 800 V 11 A 0.95 Ω

IXTH / IXTM 13N80 800 V 13 A 0.80 Ω

N-Channel Enhancement Mode

TO-247 AD (IXTH)

Maximum Ratings

Symbol

TestConditions

V_DSS

V_DGR

T_J= 25°C to 150°C

800

T_J= 25°C to 150°C; R_GS= 1 MΩ

D (TAB)

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

I_DM

T_C= 25°C

11N80

13N80

TO-204 AA (IXTM)

T_C= 25°C, pulse width limited by T_JM11N80

13N80

P_D

T_C= 25°C

300

T_J

-55 ... +150

150

°C

T_JM

T_stg

G = Gate,

S = Source,

D = Drain,

TAB = Drain

-55 ... +150

M_d

Mounting torque

1.13/10 Nm/lb.in.

TO-204 = 18 g, TO-247 = 6 g

300 °C

Weight

Features

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

●

International standard packages

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Low package inductance (< 5 nH)

- easy to drive and to protect

Fast switching times

●

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

●

Switch-mode and resonant-mode

power supplies

Motor controls

Uninterruptible Power Supplies (UPS)

DC choppers

●

V_DSS

V_GS= 0 V, I_D= 3 mA

800

●

V_GS(th)

V_DS= V_GS, I_D= 250 µA

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

Advantages

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

250 µA

●

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

Space savings

High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs,

11N80

13N80

0.95

0.80

Ω

●

915380F (5/96)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSCorporation

IXYSSemiconductor

3540 Bassett Street, Santa Clara,CA 95054

Tel: 408-982-0700 Fax: 408-496-0670

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030

Fax: +49-6206-503629

12 3 4

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