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IXTH10P60 PDF预览

IXTH10P60

更新时间: 2024-11-05 21:22:39
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 131K
描述
Power Field-Effect Transistor,

IXTH10P60 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.43JESD-609代码:e3
端子面层:Matte Tin (Sn)Base Number Matches:1

IXTH10P60 数据手册

 浏览型号IXTH10P60的Datasheet PDF文件第2页浏览型号IXTH10P60的Datasheet PDF文件第3页浏览型号IXTH10P60的Datasheet PDF文件第4页浏览型号IXTH10P60的Datasheet PDF文件第5页浏览型号IXTH10P60的Datasheet PDF文件第6页 
VDSS = - 600V  
ID25 = - 10A  
Power MOSFETs  
IXTT10P60  
IXTH10P60  
RDS(on)  
1Ω  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXTT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 600  
- 600  
V
V
TO-247 (IXTH)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 10  
- 40  
A
A
G
D
S
D (Tab)  
IA  
TC = 25°C  
TC = 25°C  
- 10  
3
A
J
EAS  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
PD  
TC = 25°C  
300  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
International Standard Packages  
Low RDS (on) HDMOSTM Process  
Rugged Polysilicon Gate Cell Structure  
Avalanche Rated  
Low Package Inductance  
- Easy to Drive and to Protect  
z
z
z
z
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
- 600  
- 3.0  
Typ.  
Max.  
z
Easy to Mount  
Space Savings  
High Power Density  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ± 20V, VDS = 0V  
VDS = 0.8 • VDSS, VGS = 0V  
V
V
z
- 5.0  
±100 nA  
Applications  
IDSS  
- 25 μA  
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
-1 mA  
z
z
RDS(on)  
1
Ω
z
DS98849E(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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