Datasheet > IXTH10P60

IXTH10P60

更新时间： 2024-09-15 21:22:39

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	131K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTH10P60 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.43	JESD-609代码：	e3
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

IXTH10P60 数据手册

V_DSS= - 600V

I_D25= - 10A

Power MOSFETs

IXTT10P60

IXTH10P60

R_DS(on)

≤

1Ω

P-Channel Enhancement Mode

Avalanche Rated

TO-268 (IXTT)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

- 600

TO-247 (IXTH)

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 10

- 40

D (Tab)

I_A

T_C= 25°C

- 10

E_AS

G = Gate

= Drain

S = Source

Tab = Drain

P_D

T_C= 25°C

300

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Features

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

International Standard Packages

Low R_{DS (on)}HDMOS^TMProcess

Rugged Polysilicon Gate Cell Structure

Avalanche Rated

Low Package Inductance

- Easy to Drive and to Protect

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-268

TO-247

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

- 600

- 3.0

Typ.

Max.

Easy to Mount

Space Savings

High Power Density

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= 0.8 • V_DSS, V_GS= 0V

- 5.0

±100 nA

Applications

I_DSS

- 25 μA

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

T_J= 125°C

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

-1 mA

R_DS(on)

DS98849E(01/13)

12 3 4 5 6

中文翻译

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