是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.43 | JESD-609代码: | e3 |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH110N10L2 | IXYS |
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Power Field-Effect Transistor, 110A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, M | |
IXTH110N10L2 | LITTELFUSE |
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这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用,具有低热阻、高功率密度和正 | |
IXTH110N25T | IXYS |
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TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated | |
IXTH110N25T | LITTELFUSE |
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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低 | |
IXTH11N100 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH11N80 | IXYS |
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MegaMOSFET | |
IXTH11N90 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH11N95 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH11P45 | IXYS |
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Transistor, | |
IXTH11P50 | IXYS |
获取价格 |
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |