5秒后页面跳转
IXTA10P50P PDF预览

IXTA10P50P

更新时间: 2024-11-05 12:27:43
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 185K
描述
PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

IXTA10P50P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:PLASTIC, TO-263, 3 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:3.94其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

IXTA10P50P 数据手册

 浏览型号IXTA10P50P的Datasheet PDF文件第2页浏览型号IXTA10P50P的Datasheet PDF文件第3页浏览型号IXTA10P50P的Datasheet PDF文件第4页浏览型号IXTA10P50P的Datasheet PDF文件第5页浏览型号IXTA10P50P的Datasheet PDF文件第6页 
PolarPTM  
Power MOSFETs  
IXTA10P50P  
IXTP10P50P  
IXTQ10P50P  
IXTH10P50P  
VDSS = - 500V  
ID25 = - 10A  
RDS(on)  
1Ω  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
TO-220AB (IXTP)  
TO-3P (IXTQ)  
G
S
G
D
S
G
D
D (Tab)  
S
D (Tab)  
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 500  
- 500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
D (Tab)  
D = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 10  
- 30  
A
A
G = Gate  
S = Source  
IA  
EAS  
TC = 25°C  
TC = 25°C  
- 10  
1.5  
A
J
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
300  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z International Standard Packages  
z Avalanche Rated  
z Rugged PolarPTM Process  
z Low Package Inductance  
z Fast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-3P,TO-220 & TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
- 500  
- 2.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
- 4.0  
z
z
±100 nA  
z
IDSS  
- 10 μA  
- 250 μA  
z
Current Regulators  
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
1
Ω
DS99911C(12/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  

IXTA10P50P 替代型号

型号 品牌 替代类型 描述 数据表
IXTQ10P50P IXYS

完全替代

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated
IXTP10P50P IXYS

完全替代

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

与IXTA10P50P相关器件

型号 品牌 获取价格 描述 数据表
IXTA110N055P IXYS

获取价格

PolarHT Power MOSFET
IXTA110N055T IXYS

获取价格

Power Field-Effect Transistor, 110A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Me
IXTA110N055T2 IXYS

获取价格

DC to DC Synchronous Converter Design
IXTA110N055T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXTA110N055T2-TRL IXYS

获取价格

Power Field-Effect Transistor,
IXTA110N055T7 IXYS

获取价格

Power Field-Effect Transistor, 112A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Me
IXTA110N055T7 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTA110N12T2 IXYS

获取价格

Power Field-Effect Transistor,
IXTA110N12T2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTA120N04T2 LITTELFUSE

获取价格

Power Field-Effect Transistor,