Datasheet > IXTA120P065T-TRL

IXTA120P065T-TRL

更新时间： 2024-11-05 19:57:15

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	189K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTA120P065T-TRL 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

IXTA120P065T-TRL 数据手册

TrenchP^TM

Power MOSFETs

V_DSS= - 65V

I_D25= - 120A

IXTA120P065T

IXTP120P065T

IXTH120P065T

R_DS(on)

≤

10mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-263 AA (IXTA)

D (Tab)

TO-220AB (IXTP)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

- 65

V_DGR

V_GSS

V_GSM

Continuous

Transient

±15

±25

D (Tab)

TO-247 (IXTH)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 120

- 360

I_A

E_AS

T_C= 25°C

- 60

P_D

T_C= 25°C

298

D (Tab)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

S = Source

= Drain

Tab = Drain

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Features

M_d

Mounting Torque (TO-220 & TO-247)

1.13/10

Nm/lb.in.

^zInternational Standard Packages

^zAvalanche Rated

Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

^zExtended FBSOA

^zFast Intrinsic Diode

Low R_DS(ON)and Q_G

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, Unless Otherwise Specified)

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ± 15V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

- 65

Applications

- 2.0

- 4.0

±100 nA

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

Battery Charger Applications

I_DSS

- 10 μA

- 750 μA

T_J= 125°C

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

10 mΩ

DS100026B(01/13)

12 3 4 5 6

中文翻译

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