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IXTA14N60P PDF预览

IXTA14N60P

更新时间: 2024-11-05 20:11:11
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
2页 82K
描述
Power Field-Effect Transistor, 14A I(D), 600V, 0.55ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

IXTA14N60P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:TO-263, 3 PIN针数:4
Reach Compliance Code:not_compliant风险等级:5.7
其他特性:AVALANCHE RATED雪崩能效等级(Eas):900 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):14 A
最大漏极电流 (ID):14 A最大漏源导通电阻:0.55 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):42 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTA14N60P 数据手册

 浏览型号IXTA14N60P的Datasheet PDF文件第2页 
ADVANCE TECHNICAL INFORMATION  
PolarHVTM  
Power MOSFET  
IXTA 14N60P  
IXTP 14N60P  
IXTQ 14N60P  
VDSS  
ID25  
= 600 V  
= 14 A  
RDS(on) 550 mΩ  
N-Channel Enhancement Mode  
TO-3P(IXTQ)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
600  
600  
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
V
G
D
VGS  
Continuous  
Tranisent  
30  
40  
V
V
(TAB)  
S
VGSM  
TO-220 (IXTP)  
ID25  
IDM  
TC = 25°C  
14  
42  
A
A
TC = 25°C, pulse width limited by TJM  
IAR  
TC = 25°C  
14  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
23  
mJ  
J
(TAB)  
G
D
S
0.9  
TO-263(IXTA)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 4 Ω  
,
10  
V/ns  
TC = 25°C  
300  
W
G
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S
(TAB)  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
250  
°C  
°C  
Features  
Md  
Mounting torque  
(TO-3P,TO-220)  
1.13/10 Nm/lb.in.  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
Weight  
TO-3P  
TO-220  
TO-263  
5.5  
4
2
g
g
g
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 30 VDC, VDS = 0  
600  
V
V
z
Easy to mount  
Space savings  
High power density  
z
3.0  
5.0  
z
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
550 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99329(02/05)  
© 2005 IXYS All rights reserved  

IXTA14N60P 替代型号

型号 品牌 替代类型 描述 数据表
IXTQ14N60P IXYS

完全替代

Power Field-Effect Transistor, 14A I(D), 600V, 0.55ohm, 1-Element, P-Channel, Silicon, Met
IXTP14N60P IXYS

功能相似

PolarHVTM Power MOSFET

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