Datasheet > IXTA12N50P

IXTA12N50P

更新时间： 2024-09-15 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	185K
描述
Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡的器件解决方案。这些器件包含了Polar技术平台，以实现低导通电阻（Rdson）。 Polar标准MOS

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数据手册

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IXTA12N50P 数据手册

Polar^TM

Power MOSFET

V_DSS= 500V

I_D25= 12A

R_DS(on)≤ 500mΩ

IXTA12N50P

IXTP12N50P

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

TO-263 AA (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

D (Tab)

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

V_DGR

TO-220AB (IXTP)

V_GSS

V_GSM

Continuous

Transient

±30

±40

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

D (Tab)

= Drain

I_A

T_C= 25°C

E_AS

600

G = Gate

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

S = Source

Tab = Drain

200

T_J

-55 ... +150

150

°C

Features

T_JM

T_stg

^zInternational Standard Packages

^zDynamic dv/dt Rating

^zAvalanche Rated

-55 ... +150

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 Seconds

300

260

°C

^zFast Intrinsic Rectifier

^zLow Q_G

M_d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

^zLow R_DS(on)

^zLow Drain-to-Tab Capacitance

^zLow Package Inductance

Weight

TO-263

TO-220

2.5

3.0

Advantages

Symbol

Test Conditions

Characteristic Values

Easy to Mount

Space Savings

(T_J= 25°C Unless Otherwise Specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ± 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

500

3.0

Applications

5.5

^zDC-DC Converters

^zBattery Chargers

±100 nA

μA

I_DSS

^zSwitch-Mode and Resonant-Mode

Power Supplies

T_J= 125°C

V_GS= 10V, I_D= 0.5 • I_D25, Notes 1, 2

250 μA

500 mΩ

^zUninterrupted Power Supplies

^zAC Motor Drives

R_DS(on)

^zHigh Speed Power Switching

Applications

DS99322G(04/10)

12 3 4 5 6

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