生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.7 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTA15P15T | IXYS |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 150V, 0.24ohm, 1-Element, P-Channel, Silicon, Met | |
IXTA15P15T | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTA160N04T2 | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTA160N04T2 | IXYS |
获取价格 |
Power Field-Effect Transistor, 160A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Me | |
IXTA160N075T | IXYS |
获取价格 |
Preliminary Technical Information TrenchMVTM Power MOSFET | |
IXTA160N075T | LITTELFUSE |
获取价格 |
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低 | |
IXTA160N075T7 | IXYS |
获取价格 |
Power Field-Effect Transistor, 160A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Me | |
IXTA160N075T7 | LITTELFUSE |
获取价格 |
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低 | |
IXTA160N10T | IXYS |
获取价格 |
Power Field-Effect Transistor, 160A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, M | |
IXTA160N10T | LITTELFUSE |
获取价格 |
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低 |