5秒后页面跳转
IXTA160N075T7 PDF预览

IXTA160N075T7

更新时间: 2024-09-13 20:03:03
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 193K
描述
Power Field-Effect Transistor, 160A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN

IXTA160N075T7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:TO-263, 6 PIN针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84其他特性:AVALANCHE RATED
雪崩能效等级(Eas):750 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (ID):160 A最大漏源导通电阻:0.006 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263
JESD-30 代码:R-PSFM-G6JESD-609代码:e3
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):430 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTA160N075T7 数据手册

 浏览型号IXTA160N075T7的Datasheet PDF文件第2页浏览型号IXTA160N075T7的Datasheet PDF文件第3页浏览型号IXTA160N075T7的Datasheet PDF文件第4页浏览型号IXTA160N075T7的Datasheet PDF文件第5页 
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
VDSS = 75  
ID25 = 160  
RDS(on) 6.0 mΩ  
V
A
IXTA160N075T7  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (7-lead) (IXTA..7)  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
75  
75  
V
V
VGSM  
Transient  
20  
V
1
ID25  
ILRMS  
IDM  
TC = 25° C  
Lead Current Limit, RMS  
TC = 25° C, pulse width limited by TJM  
160  
120  
430  
A
A
A
7
TAB  
Pins: 1 - Gate  
2, 3 - Source  
4 - NC (cut)  
5,6,7 - Source  
TAB (8) - Drain  
IAR  
EAS  
TC =25°C  
TC = 25° C  
25  
750  
A
mJ  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 175° C, RG = 5 Ω  
3
V/ns  
TC =25°C  
360  
W
Features  
Ultra-low On Resistance  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
175 ° C Operating Temperature  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-3P, TO-220)  
TO-263 types  
1.13 / 10 Nm/lb.in.  
Advantages  
Weight  
3
g
Easy to mount  
Space savings  
High power density  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
Automotive  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
75  
V
V
- Motor Drives  
- 42V Power Bus  
2.0  
4.0  
- ABS Systems  
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
High Current Switching  
VGS  
=
20 V, VDS = 0 V  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 150° C  
Applications  
RDS(on)  
VGS = 10 V, ID = 25 A, Note 1  
4.8  
6.0 m Ω  
DS99689 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  

IXTA160N075T7 替代型号

型号 品牌 替代类型 描述 数据表
IXTA160N075T IXYS

类似代替

Preliminary Technical Information TrenchMVTM Power MOSFET
IXTP160N075T IXYS

功能相似

Preliminary Technical Information TrenchMVTM Power MOSFET

与IXTA160N075T7相关器件

型号 品牌 获取价格 描述 数据表
IXTA160N10T IXYS

获取价格

Power Field-Effect Transistor, 160A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, M
IXTA160N10T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXTA160N10T7 IXYS

获取价格

Power Field-Effect Transistor, 160A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, M
IXTA160N10T7 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTA16N50P IXYS

获取价格

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXTA16N50P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTA170N075T2 IXYS

获取价格

Preliminary Technical Information TrenchT2TM Power MOSFET
IXTA170N075T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXTA180N055T IXYS

获取价格

Trench Gate Power MOSFET
IXTA180N085T IXYS

获取价格

Power Field-Effect Transistor, 180A I(D), 85V, 0.0055ohm, 1-Element, N-Channel, Silicon, M