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IXTA180N10T

更新时间: 2024-11-06 14:56:07
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
7页 322K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低的功率耗损。 再结合广泛的工作结温范围(从-40 °C到175 °C),这些产品非常适合汽车应用以及其他处

IXTA180N10T 数据手册

 浏览型号IXTA180N10T的Datasheet PDF文件第2页浏览型号IXTA180N10T的Datasheet PDF文件第3页浏览型号IXTA180N10T的Datasheet PDF文件第4页浏览型号IXTA180N10T的Datasheet PDF文件第5页浏览型号IXTA180N10T的Datasheet PDF文件第6页浏览型号IXTA180N10T的Datasheet PDF文件第7页 
TrenchTM  
Power MOSFET  
VDSS = 100V  
ID25 = 180A  
RDS(on) 6.4m  
IXTA180N10T  
IXTP180N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263  
(IXTA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220  
(IXTP)  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
100  
100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IL(RMS)  
IDM  
TC = 25C (Chip Capability)  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
180  
120  
450  
A
A
A
D (Tab)  
G = Gate  
D
= Drain  
S = Source Tab = Drain  
IA  
TC = 25C  
TC = 25C  
25  
A
EAS  
750  
mJ  
PD  
TC = 25C  
480  
W
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
Ultra-Low On Resistance  
Avalanche Rated  
Low Package Inductance  
- Easy to Drive and to Protect  
175C Operating Temperature  
Fast Intrinsic Diode  
TJM  
Tstg  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Advantages  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Easy to Mount  
Space Savings  
High Power Density  
Applications  
Automotive  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
- Motor Drives  
- 42V Power Bus  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
100  
2.5  
V
- ABS Systems  
4.5  
            100 nA  
A  
V
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
Distributed Power Architechtures  
IDSS  
5
and VRMs  
Electronic Valve Train Systems  
High Current Switching  
TJ = 150C  
VGS = 10V, ID = 25A, Notes 1& 2  
100  A  
6.4 m  
RDS(on)  
5.7  
Applications  
High Voltage Synchronous Recifier  
DS99651B(11/18)  
© 2018 IXYS CORPORATION, All rights reserved  

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