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IXTA18P10T PDF预览

IXTA18P10T

更新时间: 2024-10-31 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 开关驱动高压
页数 文件大小 规格书
7页 313K
描述
Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱动电路,避免使用N通道MOSFET通常涉及的额外“高压侧”驱动电路。 这让设计人员可以减少元件数量,从而简

IXTA18P10T 数据手册

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TrenchPTM  
Power MOSFET  
VDSS = - 100V  
ID25 = - 18A  
IXTY18P10T  
IXTA18P10T  
IXTP18P10T  
RDS(on)  
120m  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-252 (IXTY)  
G
S
D (Tab)  
D (Tab)  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
- 100  
- 100  
V
V
S
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
15  
25  
V
V
TO-220 (IXTP)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
-18  
A
A
- 60  
G
D
S
D (Tab)  
IA  
EAS  
TC = 25C  
TC = 25C  
-18  
A
200  
mJ  
PD  
TC = 25C  
83  
W
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Extended FBSOA  
Fast Intrinsic Diode  
Low RDS(ON) and QG  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25C, Unless Otherwise Specified)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250A  
VDS = VGS, ID = - 250A  
VGS = 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
-100  
V
V
- 2.5  
- 4.5  
Applications  
50 nA  
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
IDSS  
- 3 A  
-100 A  
TJ = 125C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
120 m  
DS99966D(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

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